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low power quad operational amplifiers az324 data sheet 1 aug. 2006 rev. 1. 3 bcd semiconductor manufacturing limited general description the az324 consists of four independent, high gain and internally frequency compensated operational amplifi- ers. it is specifically desi gned to operate from a single power supply. operation from split power supply is also possible and the low power supply current drain is independent of the magnitude of the power supply voltages. the az324 series are compatible with industry stan- dard 324. the az324 series are availa ble in 2 packages: dip-14 and soic-14. features internally frequency compensated for unity gain large voltage gain: 100db (typical) low input bias current: 20na (typical) low input offset voltage: 2mv (typical) low supply current: 0.5ma (typical) wide power supply voltage range: single supply: 3v to 18v dual supplies: 1.5v to 9v input common mode voltage range includes ground large output voltage swing: 0v to v cc -1.5v power drain suitable for battery operation applications battery charger cordless telephone switching power supply figure 1. package types of az324 dip-14 soic-14
low power quad operational amplifiers az324 data sheet 2 aug. 2006 rev. 1. 3 bcd semiconductor manufacturing limited functional block diagram figure 3. functional block diagram of az324 (each amplifier) figure 2. pin configuration of az324 to p vi e w m package/p package input 1- input 1+ v cc input 2+ input 2- output 2 output 1 14 output 4 13 input 4- 12 input 4+ 11 gnd 10 input 3+ 9 input 3- 8 output 3 1 2 3 4 5 6 7 (soic-14/dip-14) q2 q4 q3 q1 q8 q9 6 a 4 a q10 q11 50 a q5 q6 q13 rsc cc 100 a q7 input- input+ output q12 v cc pin configuration
low power quad operational amplifiers az324 data sheet 3 aug. 2006 rev. 1. 3 bcd semiconductor manufacturing limited ordering information package temperature range part number marking id packing type tin lead lead free tin lead lead free soic-14 -40 to 85 o c az324m az324m-e1 az324m az324m-e1 tube az324mtr az324mtr-e1 az324m az324m-e1 tape & reel dip-14 -40 to 85 o c az324p AZ324P-E1 az324p AZ324P-E1 tube bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant. circuit type package m: soic-14 e1: lead free blank: tin lead az324 - tr: tape and reel blank: tube p: dip-14
low power quad operational amplifiers az324 data sheet 4 aug. 2006 rev. 1. 3 bcd semiconductor manufacturing limited parameter symbol value unit power supply voltage v cc 20 v differential input voltage v id 20 v input voltage v ic -0.3 to 20 v input current (v in <-0.3v) (note 2) 50 ma output short circuit to ground (one amplifier) v cc 12v and t a =25 o c (note 3) continuous power dissipation (t a =25 o c) p d dip 1130 mw soic 800 operating junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10 seconds) t lead 260 o c note 1: stresses greater than those listed under "absolute ma ximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operatio n of the device under these conditions is not implied. exposure to "absolute maximum ratings" for ex tended periods may affect device reliability. note 2: this input current will only exist when the voltage at any of the input leads is driven negative. it is due to the collector-base junction of the input pnp transistors becoming forward biased and thereby act ing as input diode clamps. in addition to this diode action, there is also la teral npn parasitic transistor action on the ic chip. this transistor action can cause the output voltages of the op amps to go to the v cc voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. this is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than -0.3v (at 25 o c) note 3: short circuits from the output to v cc can cause excessive heating and ev entual destruction. when consid- ering short circuits to ground, the maximum output curr ent is approximately 40ma independent of the magnitude of v cc . at values of supply voltage in excess of +12v, co ntinuous short circ uits can exceed the power dissipation ratings and cause eventual destruction. destructive dissipation can result from simultaneous shorts on all amplifi- ers. absolute maximum ratings (note 1) recommended oper ating conditions parameter symbol min max unit supply voltage v cc 318v ambient operating temperature range t a -40 85 o c
low power quad operational amplifiers az324 data sheet 5 aug. 2006 rev. 1. 3 bcd semiconductor manufacturing limited parameter symbol test conditions min typ max unit input offset voltage v io v o =1.4v, r s =0 ? , v cc =5v to 15v 25mv input bias current (note 4) i bias i in + or i in -, v cm =0v 20 200 na input offset current i io i in + - i in - , v cm =0v 5 50 na input common mode volt- age range (note 5) v ir v cc =15v 0 v cc -1.5 v supply current i cc r l = , over full temperature range on all op amps v cc =15v 12 ma v cc =5v 0.5 1.2 large signal voltage gain g v v cc =15v , r l 2 k ?, v o =1v to 11v 85 100 db common mode rejection ratio cmrr dc, v cc =15v , v cm =0v to (v cc -1.5)v 65 85 db power supply rejection ratio psrr v cc =5v to 15v 70 90 db channel separation (note 6) cs f=1khz to 20khz (input referred) -120 db output current source i source v in +=1v, v in -=0v, v cc =15v, v o =2v 20 45 ma sink i sink v in +=0v, v in -=1v, v cc =15v, v o =2v 10 20 ma v in +=0v,v in -=1v, v cc =15v, v o =0.2v 12 50 a output short circuit to ground i sc v cc =15v 45 60 ma output voltage swing v oh v cc =15v, r l =2k ? 12 v v cc =15v, r l =10k ? 12.5 13.5 v ol v cc =5v, r l =10k ? 520mv operating conditions: v cc =5v, gnd=0v, t a =25 o c unless otherwise specified. note 4: the direction of the input current is out of the ic due to the pnp input stage. this current is essentially constant, independent of the state of the output so no loading change exists on the input lines. note 5: the input common-mode voltage of either input signal voltage should not be allowed to go negatively by more than 0.3v (at 25 o c). the upper end of the common-mode voltage range is vcc -1.5v (at 25 o c), but either or both inputs can go to +18v without damages, independent of the magnitude of the v cc . note 6: due to proximity of external components, insure that coupling is not originating via stray capacitors between these external parts. this typi cally can be detected as this type of capacitance in creases at higher frequen- cies. electrical characteristics
low power quad operational amplifiers az324 data sheet 6 aug. 2006 rev. 1. 3 bcd semiconductor manufacturing limited figure 4. input voltage ra nge figure 5. input current figure 7. voltage gain figure 6. supply current 0 2 4 6 8 10 12 14 16 18 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t a = 0 o c to 85 o c power supply voltage (v) supply current drain (ma) -40-20 0 20406080100120 0 5 10 15 20 25 30 v cc =15v input current (na) temperature ( o c) a i d ma v cc 02468101214161820 60 70 80 90 100 110 120 r l =2k ? r l =20k ? voltage gain (db) power supply voltage (v) typical performance characteristics 02468 0 1 2 3 4 5 6 7 8 positive negative power supply voltage (v dc ) input voltage (v dc )
low power quad operational amplifiers az324 data sheet 7 aug. 2006 rev. 1. 3 bcd semiconductor manufacturing limited figure 8. open loop frequency response frequency (hz) voltage gain (db) figure 9. voltage follower pulse response input time ( s) output voltage (v) voltage (v) v cc =15v r l =2k ? figure 11. large signal frequency response figure 10. voltage follower pulse response (small signal) output swing (v p-p ) 50pf v in v out t a =25 o c v cc= 15v time ( s) frequency (hz) output voltage (mv) typical performance ch aracteristics (continued) 1 10 100 1k 10k 100k 1m 0 10 20 30 40 50 60 70 80 90 100 110 t a : -40 o c to 85 o c v cc :10v to 15v dc r 10m v in v cc /2 v o v cc 0.1uf 0 5 10 15 20 1k 10k 100k 1m r 2k r 100k r 1k v in +7v dc v o +15 v dc
low power quad operational amplifiers az324 data sheet 8 aug. 2006 rev. 1. 3 bcd semiconductor manufacturing limited figure 12. output characteristics current sourcing figure 14. current limiting -40-200 20406080 0 10 20 30 40 50 60 70 80 90 100 temperature ( o c) output current (ma) i o 1e-3 0.01 0.1 1 10 100 1 2 3 4 5 6 7 8 independent of v cc , t a = 25 o c output voltage referenced to v cc (v) output source current (ma) vo v cc i o v cc /2 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 10 v cc =+5v v cc =+15v figure 13. output charac teristics current sinking output voltage (v) output sink current (ma) v cc /2 vo v cc i o typical performance ch aracteristics (continued)
low power quad operational amplifiers az324 data sheet 9 aug. 2006 rev. 1. 3 bcd semiconductor manufacturing limited typical applications figure 16. dc summing amplifier figure 17. power amplifier r6 100k v o r5 100k r1 100k r2 100k r3 100k r4 100k +v 1 +v 2 +v 3 +v 4 1/4 az324 + - figure 15. battery charger ac line smps r2 current sense r7 r8 battery pack r4 r3 az431 r5 r6 r1 opto isolator v cc gnd gnd - + 1/4 az324 + - 1/4 az324 r1 910k v o r2 100k r3 91k v in(+) v cc r l 1/4 az324 - +
low power quad operational amplifiers az324 data sheet 10 aug. 2006 rev. 1. 3 bcd semiconductor manufacturing limited typical applicat ions (continued) figure 20. pulse generator figure 19. ac coupled non-inverting amplifier figure 21. dc coupled low-pass rc active filter v cc r4 3k r3 2k + - 2v + - 2v i1 i2 1ma 1/4 az324 r1 2k r2 - + figure 18. fixed current sources r5 100k r3 100k r4 100k r2 100k r1 1m v o v cc 1/4 az324 0.001 f - + r2 16k r1 16k v in r3 100k 1/4 az324 r4 100k c2 0.01 f c1 0.01 f f 0 v 0 0 fo=1khz q=1 a v =2 + - v o r4 100k v cc r3 1m r1 100k r2 1m c1 0.1 f c in r5 100k c o v o 1/4 az324 r l 10k c2 10 f a v =1+r2/r1 a v =11 (as shown) - + ac r b 6.2k
low power quad operational amplifiers az324 data sheet 11 aug. 2006 rev. 1. 3 bcd semiconductor manufacturing limited mechanical dimensions dip-14 unit: mm(inch) 4 0.254(0.010) 5 10 10 4 18.800(0.740) 19.200(0.756) 0.360(0.014) 0.560(0.022) 2.540(0.100)typ r1.000(0.039) 0.130(0.005)min 7.620(0.300)typ 0.700(0.028) 3.000(0.118) depth 0.100(0.004) 0.200(0.008) 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 1.600(0.063) 1.800(0.071) 1.600(0.063) 1.800(0.071) 1.524(0.060) typ 3.000(0.118) 3.600(0.142) 0.510(0.020)min 6.200(0.244) 6.600(0.260)
low power quad operational amplifiers az324 data sheet 12 aug. 2006 rev. 1. 3 bcd semiconductor manufacturing limited mechanical dimens ions (continued) soic-14 unit: mm(inch) 8.550(0.337) 1.350(0.053) 7 7 0.700(0.028) 0.100(0.004) 0 . 2 5 0 ( 0 . 0 1 0 ) 0.500(0.020) 1 r0.200(0.008) 20:1 a 0.280(0.011) 45 8 a 8 0 . 1 9 0 ( 0 . 0 0 7 ) 9 . 5 8 0 8 depth 0.060(0.002) 0.100(0.004) 2.000(0.079) 1.270(0.050) 1.000(0.039) 1 . 3 0 0 ( 0 . 0 5 1 ) 5 . 8 0 0 ( 0 . 2 2 8 ) 8.750(0.344) 0.250(0.010) 1 . 7 5 0 ( 0 . 0 6 9 ) 0 . 2 5 0 ( 0 . 0 1 0 ) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.510(0.020) 6 . 2 0 0 ( 0 . 2 4 4 ) 0.600(0.024) 5 r0.200(0.008) 0 . 2 5 0 ( 0 . 0 1 0 ) 0 . 2 0 0 ( 0 . 0 0 8 ) m i n 0.480(0.019) 45
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office 27b, tower c, 2070, middle shen nan road, shenzhen 518031, china tel: +86-755-8368 3987, fax: +86-755-8368 3166 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808, fax: +886-2-2656 2806 usa office bcd semiconductor corporation 3170 de la cruz blvd., suite 105, santa clara, ca 95054-2411, u.s.a tel: +1-408-988 6388, fax: +1-408-988 6386 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com

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